Complex oxide growth using simultaneous in situ reflection high-energy electron diffraction and x-ray reflectivity: When is one layer complete?

被引:21
|
作者
Sullivan, M. C. [1 ,2 ]
Ward, M. J. [3 ]
Gutierrez-Llorente, Araceli [2 ]
Adler, Eli R. [1 ,3 ]
Joress, H. [3 ,4 ]
Woll, A. [3 ]
Brock, J. D. [2 ,3 ]
机构
[1] Ithaca Coll, Dept Phys & Astron, Ithaca, NY 14850 USA
[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[3] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA
[4] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
基金
美国国家卫生研究院; 美国国家科学基金会;
关键词
PULSED-LASER DEPOSITION; RHEED INTENSITY OSCILLATIONS; EPITAXIAL-GROWTH; STEPPED SURFACES; SRTIO3; GAAS; MBE; FILMS; PRESSURE; KINETICS;
D O I
10.1063/1.4906419
中图分类号
O59 [应用物理学];
学科分类号
摘要
During layer-by-layer homoepitaxial growth, both the Reflection High-Energy Electron Diffraction (RHEED) intensity and the x-ray reflection intensity will oscillate, and each complete oscillation indicates the addition of one monolayer of material. However, it is well documented, but not well understood, that the phase of the RHEED oscillations varies from growth to growth and thus the maxima in the RHEED intensity oscillations do not necessarily occur at the completion of a layer. We demonstrate this by using simultaneous in situ x-ray reflectivity and RHEED to characterize layer-by-layer growth of SrTiO3. We show that we can control the RHEED oscillation phase by changing the pre-growth substrate annealing conditions, changing the RHEED oscillation phase by as much as 137 degrees. In addition, during growth via pulsed laser deposition, the relaxation times between each laser pulse can be used to determine when a layer is complete, independent of the phase of the RHEED oscillation. (C) 2015 AIP Publishing LLC.
引用
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页数:4
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