Polycrystalline silicon thin-film transistor with metal-replaced junctions

被引：0
|
作者：
Wong, Man [1 ]
Zhang, Dongli [1 ]
Chow, Thomas [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
AD'07: PROCEEDINGS OF ASIA DISPLAY 2007, VOLS 1 AND 2 | 2007年
关键词：
metal-replaced junction; polycrystalline silicon; thin-film transistor;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Polycrystalline silicon thin-film transistor (TFT) with metal-replaced junctions (MERJs) is demonstrated. The TFT is found to exhibit not only reduced parasitic resistance but also improved intrinsic device characteristics. A three-mask MERJ TFT with metallic gate is also demonstrated. The reduced delay on the low-resistance metallic gate line makes the 3-mask MERJ TFT technology particularly suitable for realizing large-area active-matrix panels.
引用
收藏
页码：507 / 512
页数：6
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