HICUM/L2: Extensions over the last decade

被引：0
|
作者：
Schroeter, M. [1 ]
Pawlak, A. [2 ]
Mukherjee, A. [1 ]
Celi, D. [3 ]
Krattenmacher, M. [1 ]
机构：
[1] Tech Univ Dresden, Chair Electron Devices & Integrated Circuits, Dresden, Germany
[2] Infineon AG, Neubiberg, Germany
[3] STMicroelectronics, Crolles, France
来源：
2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2020年
基金：
美国国家科学基金会;
关键词：
bipolar transistor; compact modeling; HICUM;
D O I：
10.1109/BCICTS48439.2020.9392954
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A concise overview on the features of the most recently released version 3.0.0 of the industry standard compact bipolar transistor model HICUM/L2 is provided. The focus here is on the development of the model over the past ten years since its detailed description in [1]. The rationales for the various extensions, their physical background and some of the code implementation peculiarities are discussed.
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页数：4
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