Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2

被引：1
|
作者：
Mueller, Markus [1 ,2 ]
Weimer, Christoph [1 ,2 ]
Schroeter, Michael [1 ,2 ]
机构：
[1] Tech Univ Dresden, Chair Electro Devices & Integrated Circuits CEDIC, D-01062 Dresden, Germany
[2] SemiMod GmbH, D-01159 Dresden, Germany
来源：
IEEE 53RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, ESSDERC 2023 | 2023年
关键词：
compact modeling; device modeling; HBT; HICUM; InP HBT; load-pull analysis; thermal breakdown; self-heating;
D O I：
10.1109/ESSDERC59256.2023.10268515
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
HICUM/L2 model extensions for accurate scalable compact modeling of a state-of-the-art InP/InGaAs DHBT technology are presented. It is shown that the resulting HICUM/L2 model is suitable to predict the transistor behavior under large-signal conditions at high output power. The impact of self-heating on the safe-operating-area is discussed.
引用
收藏
页码：45 / 48
页数：4
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