Properties of nanocrystalline Si layers embedded in structure of solar cell

被引:0
|
作者
Jurecka, Stanislav [1 ]
Imamura, Kentaro [2 ,3 ]
Matsumoto, Taketoshi [2 ,3 ]
Kobayashi, Hikaru [2 ,3 ]
机构
[1] Univ Zilina, Inst Aurel Stodola, Nalepku 1390, Liptovsk Mikulas 03101, Slovakia
[2] Osaka Univ, Inst Sci & Ind Res, Mihogaoka 8-1, Ibaraki, Osaka 5670047, Japan
[3] Japan Sci & Technol Agcy, CREST, Mihogaoka 8-1, Ibaraki, Osaka 5670047, Japan
基金
日本学术振兴会;
关键词
semiconductor; silicon solar cell; microstructure; Fourier analysis; MULTIFRACTAL ANALYSIS; SILICON; SURFACES;
D O I
10.1515/jee-2017-0055
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Suppression of spectral reflectance from the surface of solar cell is necessary for achieving a high energy conversion efficiency. We developed a simple method for forming nanocrystalline layers with ultralow reflectance in a broad range of wavelengths. The method is based on metal assisted etching of the silicon surface. In this work, we prepared Si solar cell structures with embedded nanocrystalline layers. The microstructure of embedded layer depends on the etching conditions. We examined the microstructure of the etched layers by a transmission electron microscope and analysed the experimental images by statistical and Fourier methods. The obtained results provide information on the applied treatment operations and can be used to optimize the solar cell forming procedure.
引用
收藏
页码:48 / 52
页数:5
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