Analysis of the Low-Frequency Noise of Junctionless Nanowire Transistors Operating in Saturation

被引:0
|
作者
Doria, R. T. [1 ]
Trevisoli, R. D. [2 ]
de Souza, M. [1 ]
Colinge, J. P. [3 ]
Pavanello, M. A. [1 ,2 ]
机构
[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo, Brazil
[2] Univ Fed Sao Paulo, LSI PSI USP, Sao Paulo, Brazil
[3] Tyndall Natl Inst, Dyke Parade, Ireland
基金
爱尔兰科学基金会; 巴西圣保罗研究基金会;
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页数:2
相关论文
共 50 条
  • [31] Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors
    Trevisoli, Renan
    Doria, Rodrigo Trevisoli
    Barraud, Sylvain
    Pavanello, Marcelo Antonio
    MICROELECTRONIC ENGINEERING, 2019, 215
  • [32] Low-Frequency Noise Reduction in Si Nanowire MOSFETs
    Ohmori, K.
    Feng, W.
    Hettiarachchi, R.
    Lee, Y.
    Sato, S.
    Kakushima, K.
    Sato, M.
    Fukuda, K.
    Niwa, M.
    Yamabe, K.
    Shiraishi, K.
    Iwai, H.
    Yamada, K.
    DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES, 2012, 45 (03): : 437 - 442
  • [33] Low-Frequency Noise in Vertical InAs Nanowire FETs
    Persson, Karl-Magnus
    Lind, Erik
    Dey, Anil W.
    Thelander, Claes
    Sjoland, Henrik
    Wernersson, Lars-Erik
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) : 428 - 430
  • [34] Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs
    Zhuge, Jing
    Wang, Runsheng
    Huang, Ru
    Tian, Yu
    Zhang, Liangliang
    Kim, Dong-Won
    Park, Donggun
    Wang, Yangyuan
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (01) : 57 - 60
  • [35] Analysis of the leakage current in junctionless nanowire transistors
    Trevisoli, Renan
    Doria, Rodrigo Trevisoli
    de Souza, Michelly
    Pavanello, Marcelo Antonio
    APPLIED PHYSICS LETTERS, 2013, 103 (20)
  • [36] On-wafer Low-frequency Noise Characterization of Transistors Over a Wide Range of Operating Currents
    Ma, James
    Usmani, Fahad Ali
    Yang, Lianfeng
    Liu, Zhihong
    2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 197 - 200
  • [37] Low-Frequency Noise in InGaAs-OI Transistors
    Marquez, Carlos
    Navarro, Carlos
    Karg, Siegfried
    Ortega, Ruben
    Zota, Cezar
    Gamiz, Francisco
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (06) : 3964 - 3969
  • [38] INVESTIGATION OF LOW-FREQUENCY NOISE OF BIPOLAR-TRANSISTORS
    LUCHININ, AS
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA, 1990, 33 (05): : 624 - 631
  • [39] A MICROWAVE METHOD FOR MEASURING THE LOW-FREQUENCY NOISE OF TRANSISTORS
    Usychenko, V. G.
    Chernova, A. S.
    ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2024, 17 (02): : 61 - 70
  • [40] Multiplicative and Additive Low-Frequency Noise in Microwave Transistors
    Weinreb, Sander
    Schleeh, Joel
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (01) : 83 - 91