Electron-phonon interaction of wurtzite GaN and its effect on high field transport

被引：0

作者：

Yamakawa, S ^{[1
]}

Barker, JM ^{[1
]}

Goodnick, SM ^{[1
]}

Ferry, DK ^{[1
]}

Saraniti, M ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A full-band electron transport calculation in wurtzite phase GaN is reported based on a full model of the electron-phonon interaction within a Cellular Monte Carlo (CMC) approach. The deformation potential electron-phonon coupling is calculated directly from the electronic bandstructure and lattice dynamics via the rigid pseudo-ion model. A good overall agreement between theory and measured velocity-field data is obtained with this model including polar optical and piezoelectric phonon, impurity, and dislocation scattering.

引用

页码：227 / 228

页数：2

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