Influence of the electron-phonon interaction on electron transport in wurtzite GaN

被引：30
|
作者：
Yamakawa, S [1 ]
Aboud, S
Saraniti, M
Goodnick, SM
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期
关键词：
D O I：
10.1088/0268-1242/19/4/156
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A full-band electron transport calculation in wurtzite phase GaN based on an accurate model of electron-phonon interactions using a rigid pseudo-ion model is reported. The calculated deformation potentials are used to estimate the scattering rate in a cellular Monte Carlo (CMC) simulator. Longitudinal optical (LO)-like and transverse optical (TO)-like polar optical phonon scatterings are also employed in this work. The calculated velocity is lower than the previous works which used fixed deformation potentials.
引用
收藏
页码：S475 / S477
页数：3
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