Energy dependent ripple growth on Si (100) by N+ ion beam irradiation

被引：8
|
作者：
Bhowmik, D. [1 ]
Karmakar, P. [1 ]
机构：
[1] Variable Energy Cyclotron Ctr, 1-AF, Kolkata 700064, India
来源：
61ST DAE-SOLID STATE PHYSICS SYMPOSIUM | 2017年 / 1832卷
关键词：
Ion beam sputtering; Ripple morphology; Si; Atomic Force Microscopy;
D O I：
10.1063/1.4980479
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The energy dependence of pattern formation on Si (100) surface by N+ ion beam irradiation has been studied. Periodic ripple pattern growth has been found for low energy (5-10 keV) N+ ion bombardment at oblique incidence at a fluence of 7 x 10(17) ions/cm(2). The wave vector of the ripples is parallel to the ion beam direction which follows the Bradley Harper theory of ripple growth [Bradley et. al, J. Vac. Sci. Technol. A 6, 2390 (1988)]. We also found that the lateral (wavelength) and vertical (roughness) dimensions of the ripples increase with the ion energy. Ion penetration and collision cascade dimensions are calculated by Stopping and Range of Ions in Matter (SRIM). It is found that the roughness is proportional to ion penetration depth whereas the wavelength is proportional to the horizontal width of collision cascade.
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页数：3
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