Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

被引：10

作者：

Liu, XY ^{[1
]}

Fälth, JF

Andersson, TG

Holmström, P

Jänes, P

Ekenberg, U

Thylén, L

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[2] Royal Inst Technol, KTH, Dept Microelect & Informat Technol, Lab Opt Photon & Quantum Elect, S-16440 Kista, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

FT-IR spectroscopy; intersubband transitions; X-ray diffraction; molecular beam epitaxy; multiple quantum wells; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2004.12.080

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN/AIN multiple quantum well structures of 1, 5 and 20 periods were grown by molecular beam epitaxy (MBE). To investigate structural parameters, symmetrical scan (0002) and reciprocal space mapping in the vicinity of the GaN (10 15) plane were made by X-ray diffraction (XRD). The layer thickness, composition and relaxation were determined and gave good agreement with simulated results. The 20 period multiple quantum well (MQW) sample exhibited an intersubband resonance at 360 meV, which corresponds well to the structure data determined by XRD. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：397 / 401

页数：5

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