Photoluminescence and excitation spectrum of Mg-doped p-type AlXGa1-XN

被引：1

作者：

Suzuki, M. ^{[1
]}

Sawai, S. ^{[1
]}

Fukui, K. ^{[1
]}

Nagamatsu, K. ^{[2
]}

Amano, H. ^{[2
]}

机构：

[1] Univ Fukui, Dept Elect & Elect Engn, Bunkyo Ku, Fukui 9108507, Japan

[2] Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

D O I：

10.1002/pssc.200880905

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have been measured the near band edge photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Mg doped AlGaN. PL and PLE peak energies were almost corresponding to those of undoped AlGaN. From the temperature dependent measurement of the PL spectra, the PL peak energy shift as a function of temperature showed S-shaped behaviour. These results suggest that the mechanisms of the near band edge PL of AlGaN:Mg are basically similar to those of undoped AlGaN. Using the known spectral feature of undoped AlGaN which consists of main and LO phonon replica emission bands at even interval energy and same line width, the spectral decomposition of the PL spectrum reveals an additional band which is expected as the transition to the acceptor level arising from Mg doping. The temperature dependences of its peak energy and intensity suggest relative temperature shift of the acceptor level and also may imply the existence of another relaxation pathway. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S759 / S762

页数：4

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