Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage

被引：0

作者：

Flitcroft, RM ^{[1
]}

Lye, BC ^{[1
]}

Yow, HK ^{[1
]}

Houston, PA ^{[1
]}

Button, CC ^{[1
]}

David, JPR ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al0.11Ga0.89As in the base, adjacent to the collector has been used to eliminate the conduction band spike and demonstrate double HBTs with high breakdown voltages, BVCEO and BVBCO, of 44V (current gain of 20) and 54V respectively with a 1 mu m thick GaInP collector doped to 2x10(16)cm(-3) without any voltage dependence on the gain. The inferred electron lifetime in the AlGaAs base was found to be approximately ten times smaller than the equivalently doped GaAs. Analysis of the Kirk effect yielded an estimate of the effective velocity in the GaInP collector of 4.3x10(6)cms(-1) at room temperature. A graded AlGaAs base and graded transition from GaInP at the base/collector junction to AlInP demonstrated a record breakdown voltage, BVBCO=74V, for the same collector doping and thickness. Electron impact ionisation coefficients were measured for use in an Ebers-Moll model to predict breakdown voltage.

引用

页码：435 / 438

页数：4

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