Broad-area semiconductor lasers with spatially modulated reflectivity of the mirrors

被引：8
|
作者：
Mroziewicz, B
机构：
[1] Institute of Electron Technology, 02-688 Warszawa
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 04期
关键词：
semiconductor junction lasers;
D O I：
10.1049/el:19960209
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Emission properties of broad-area semiconductor lasers with stripes etched on one of the laser mirrors, perpendicular to the p-n junction plane, are described. Spatial modulation of the mirror reflectivity induced lasing of individual, phase coupled filaments and significantly affected the shape of the laser output beam. The cross-section of the beam became almost circular and had an intensity distibution along its horizontal and vertical axes that could be approximated by a Gaussian function.
引用
收藏
页码：329 / 330
页数：2
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