Optimization of the Schottky varactor for frequency multiplier applications at submillimeter wavelengths

被引：10
|
作者：
Louhi, JT
Raisanen, AV
机构：
[1] Helsinki University of Technology, Radio Laboratory
来源：
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1996年 / 6卷 / 06期
关键词：
D O I：
10.1109/75.509902
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Schottky varactor frequency multipliers are used to generate the all-solid-state local oscillator power at submillimeter wavelengths. The aim of this work was to develop a routine that can be used to optimize the electrical and geometrical parameters of the Schottky varactor in order to maximize the output power of the submillimeter wave Schottky varactor frequency multiplier, The optimization of the epitaxial layer thickness and doping density and the anode area significantly increases the maximum theoretical output power at the THz range.
引用
收藏
页码：241 / 242
页数：2
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