Structural characterization of epitaxial Cd1-xZnxTe semiconductor thin films by ion beam techniques

被引：2

作者：

Fernández-Lima, F

Larramendi, EM

Purón, E

Pedrero, E

de Melo, O

Baptista, DL

Zawislak, FC

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Havana, IMRE, Fac Phys, Havana, Cuba

[3] Inst Nucl Sci & Technol, Havana, Cuba

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 253卷 / 1-4期

关键词：

characterization; vapor phase epitaxy; alloys; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(03)01023-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the structural characterization of ZnTe, CdTe and Cd1-xZnxTe epilayers grown on GaAs(1 0 0) by isothermal closed space sublimation epitaxy. A detailed study of the heterostructures based on conventional Rutherford backscattering spectrometry, ion channeling and nuclear reaction analysis allows to determine the thickness, composition, impurities, lateral homogeneity and interface structure of the grown thin films. The growth rates were determined for the extreme composition (ZnTe, CdTe). Stoichiometry and lateral homogeneity were observed in ZnTe and CdTe films. Low carbon contamination homogeneously distributed in the film was present and no oxygen contamination of the samples was observed. The channeling analysis of ZnTe films allowed to evaluate the thickness of the interface damaged region. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：89 / 94

页数：6

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