2-12 GHz High-Power GaN MMIC Switch Utilizing Stacked-FET Circuits

被引：1

作者：

Hangai, Masatake ^{[1
]}

Komaru, Ryota ^{[1
]}

Miwa, Shinichi ^{[2
]}

Kamo, Yoshitaka ^{[3
]}

Shinjo, Shintaro ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Tokyo, Japan

[2] Mitsubishi Electr Corp, Commun Syst Ctr, Tokyo, Japan

[3] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan

来源：

2019 49TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2019年

关键词：

switch; high-power gallium nitride broadband;

D O I：

10.23919/EuMC.2019.8910824

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved in broadband frequency range. The design equations to minimize insertion loss while maintaining high-power handling capability have been analytically derived. To verify this methodology, an MMIC switch was fabricated at 2-12 GHz. The switch demonstrates the power handling capability of 10W and the insertion loss of 1.5dB.

引用

页码：840 / 843

页数：4

共 33 条

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