Advanced Organic Polymer for the Aggressive Scaling of Low-k Materials

被引：12

作者：

Pantouvaki, Marianna ^{[1
]}

Huffman, Craig ^{[1
]}

Zhao, Larry ^{[2
]}

Heylen, Nancy ^{[1
]}

Ono, Yukiharu ^{[3
]}

Nakajima, Michio ^{[3
]}

Nakatani, Koji ^{[3
]}

Beyer, Gerald P. ^{[1
]}

Baklanov, Mikhail R. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] IMEC, INTEL, B-3001 Louvain, Belgium

[3] Sumitomo Bakelite Co Ltd, Yokohama, Kanagawa 2450052, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

关键词：

D O I：

10.1143/JJAP.50.04DB01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An advanced organic polymer material of k = 2.2 has been successfully integrated in Cu lines with dielectric spacing from 80 to 20 nm. Cu lines with both TaN/Ta barrier and no barrier were fabricated. Current-voltage (I-V) and time dependent dielectric breakdown (TDDB) measurements were performed to study the scalability of this material. In the case of TaN/Ta barrier, no TDDB degradation was observed at 100 degrees C as the dielectric spacing changed from 80 to 30 nm. In the case of no barrier, TDDB performance at 100 degrees C was better than that of SiO2 without a barrier. However, TDDB at 200 degrees C showed a clear degradation. In contrast, no such degradation was present when TaN/Ta barrier was used. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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