High operating temperature (HOT) broadband quantum-dot photodetector

被引：1
|
作者：
Vasinajindakaw, Puminun [1 ]
Lu, Xuejun [1 ]
Qian, Xifeng [2 ]
Vangala, Shivashankar R. [2 ]
Goodhue, William [2 ]
机构：
[1] Univ Massachusetts, Dept Elect & Comp Engn, 1 Univ Ave, Lowell, MA 01854 USA
[2] Univ Massachusetts, Dept Phys, Lowell, MA 01854 USA
来源：
INFRARED TECHNOLOGY AND APPLICATIONS XXXVII | 2011年 / 8012卷
关键词：
high operating temperature (HOT) quantum dot infrared photodetector (QDIP); thermal-electrically (TE) cooled middle wave infrared (MWIR) photodetector; WELL INFRARED PHOTODETECTOR;
D O I：
10.1117/12.887362
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a high operating temperature (HOT) broadband InAs/GaAs quantum dot (QD) infrared photodetector (QDIP) is reported. The QDIP covers a wide detection spectrum range from 3 mu m to 10 mu m. A large photoresponsivity of 12.0 A/W at a low bias voltage of 0.15V and a high peak specific photodetectivity D* of 1.2x10(8) cmHz(1/2)/W are obtained at a high operating temperature of 298 K.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Broadband Quantum-Dot Infrared Photodetector
    Lin, Wei-Hsun
    Tseng, Chi-Che
    Chao, Kuang-Ping
    Kung, Shu-Yen
    Lin, Shih-Yen
    Wu, Meng-Chyi
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (13) : 963 - 965
  • [2] High Operating Temperature Quantum-Dot Infrared Photodetector Using Advanced Capping Techniques
    Shao, Jiayi
    Vandervelde, Thomas E.
    Jang, Woo-Yong
    Stintz, Andreas
    Krishna, Sanjay
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 10 (05) : 1010 - 1014
  • [3] Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
    Bhattacharya, P
    Su, XH
    Chakrabarti, S
    Ariyawansa, G
    Perera, AGU
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (19) : 1 - 3
  • [4] Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature
    Razeghi, M.
    Lim, H.
    Tsao, S.
    Seo, H.
    Zbang, W.
    [J]. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 15 - 16
  • [5] High-gain quantum-dot infrared photodetector
    Mitin, VV
    Pipa, VI
    Sergeev, AV
    Dutta, M
    Stroscio, M
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2001, 42 (3-5) : 467 - 472
  • [6] Quantum-dot photodetector operating at room temperatures: diffusion-limited capture
    Sergeev, A
    Mitin, V
    Stroscio, M
    [J]. PHYSICA B-CONDENSED MATTER, 2002, 316 : 369 - 372
  • [7] InGaAs/InGaP quantum-dot infrared photodetector with a high detectivity
    Lim, Ho-Chul
    Tsao, Stanley
    Taguchi, Maho
    Zhang, Wei
    Quivy, Alain Andre
    Razeghi, Manijeh
    [J]. QUANTUM SENSING AND NANOPHOTONIC DEVICES III, 2006, 6127
  • [8] In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
    Jiang, L
    Li, SS
    Yeh, NT
    Chyi, JI
    Ross, CE
    Jones, KS
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1986 - 1988
  • [9] Long wave infrared InAs-InGaAs quantum-dot infrared photodetector with high operating temperature over 170K
    Lu, Xuejun
    Vaillancourt, Jarrod
    Meisner, Mark J.
    Stintz, Andreas
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (19) : 5878 - 5882
  • [10] Characteristics of high-operating-temperature InAs/GaAs quantum-dot infrared detectors
    Pal, D
    Towe, E
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (15)
12345