Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature

被引：1
|
作者：
Razeghi, M. [1 ]
Lim, H. [1 ]
Tsao, S. [1 ]
Seo, H. [1 ]
Zbang, W. [1 ]
机构：
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/LEOS.2007.4382251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a room temperature operating and high-performance InAs quantum-dot infrared photodetector on InP substrate and thermal imaging of 320x 256 focal plane array based on this device up to 200 K.
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页码：15 / 16
页数：2
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