Pseudo p-i-n Avalanche Diode Clamp

被引：0
|
作者：
Vashchenko, V. A. [1 ]
Shibkov, A. A. [2 ]
机构：
[1] Maxim Integrated Corp, San Jose, CA 95134 USA
[2] Angstrom Design Automat, San Jose, CA USA
来源：
2014 36TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD) | 2014年
关键词：
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A new HV ESD protection avalanche diode design is proposed based on numerical analysis and experimentally validated. The device utilizes the double avalanche-injection conductivity modulation effect with additional diffusion ballasting region. It is demonstrated that the new solution provides lower on-state resistance normalized to area and lower capacitance compared to the conventional architecture of the integrated HV avalanche diodes.
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页数：8
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