Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency

被引：18
|
作者：
Shin, Walter [1 ]
Pandey, Ayush [1 ]
Liu, Xianhe [1 ]
Sun, Yi [1 ]
Mi, Zetian [1 ]
机构：
[1] Univ Michigan, Dept Elect & Comp Engn, 1301 Beal Ave, Ann Arbor, MI 48105 USA
来源：
OPTICS EXPRESS | 2019年 / 27卷 / 26期
关键词：
III-NITRIDE BLUE; ALGAN; POLARIZATION; LEDS;
D O I：
10.1364/OE.380739
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on the demonstration of top emitting AlGaN tunnel junction deep ultraviolet (UV) light emitting didoes (LEDs) operating at similar to 267 nm. We show, both theoretically and experimentally, that the light extraction efficiency can be enhanced by nearly a factor of two with the incorporation of AlGaN nanowire photonic crystal structures. A peak wall-plug efficiency (WPE) similar to 3.5% and external quantum efficiency (EQE) similar to 5.4% were measured for AlGaN LEDs directly on-wafer without any packaging. This work demonstrates a viable path for achieving high efficiency deep UV LEDs through the integration of AlGaN planar and nanoscale structures. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：38413 / 38420
页数：8
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