Electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystal

被引：1
|
作者：
Han, LQ [1 ]
Iizawa, N [1 ]
Chiba, Y [1 ]
Yoneta, T [1 ]
Kaimai, A [1 ]
Yashiro, K [1 ]
Yugami, H [1 ]
Nigara, Y [1 ]
Kawada, T [1 ]
Mizusaki, J [1 ]
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
CERAMIC INTERFACES: PROPERTIES AND APPLICATIONS V | 2003年 / 253卷
关键词：
electrical resistance; single crystals; SrTiO3; surface layer;
D O I：
10.4028/www.scientific.net/KEM.253.29
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of the surface layer formed on Sr (Ti-0.999 Nb-0.001) O-3 single crystal were investigated as a function of oxygen partial pressure and temperature. At room temperature, a high resistive layer was found on the surface of the single crystal with thickness of about 10 mu m after annealing in the air. The resistance of the surface layer is high and insensitive to Po-2 in oxidizing atmospheres, but decreased quickly with decreasing Po-2 in reduced atmospheres at elevated temperature. The resistance decreased when temperature increased up to 1200 degrees C. The fitted activation energy of conduction is about 1.62 eV within 109 Po-2 range from -4.0 to -0.1 below 800 degrees C. This value is near reported activation energy of conduction of the grain boundary in SrTiO3.
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收藏
页码：29 / 41
页数：13
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