Close-spaced sublimation growth of homo- and hetero-epitaxial CdTe thick films

被引：12

作者：

Jiang, Q. ^{[1
]}

Cantwell, B. J. ^{[2
]}

Mullins, J. T. ^{[2
]}

Basu, A. ^{[2
]}

Brinkman, A. W. ^{[1
]}

机构：

[1] Univ Durham, Dept Phys, Durham DH1 3LE, England

[2] Durham Sci Crystals Ltd, NetPark Incubator, Sedgefield TS21 3FD, Durham, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期

基金：

英国工程与自然科学研究理事会;

关键词：

crystal morphology; vapour phase epitaxy; semiconductor II-VI materials;

D O I：

10.1016/j.jcrysgro.2007.12.043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports on the growth using a modified close space sublimation of good epitaxial CdTe layers on GaAs substrates and a multi-grain CdTe seedplate. Decreasing the substrate-source distance to a few millimetres improves the substrate-vapour interfacial stability and homogeneity and slows the growth rate and thus the nucleation process. The defects and grain boundaries of a multi-grain seed were reproduced in the film. "Dual-epitaxial" was observed on both (10 0) and mis-oriented (10 0) GaAs substrates. Growth rates of 5-20 mu m/h and FWHM values as low as 300 arcsec were recorded from similar to 120 mu m thick CdTe(2 1 1) B films, the surface morphology of which differed from those grown by other PVT methods. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1664 / 1668

页数：5

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