Electron spin relaxation times of phosphorus donors in silicon

被引：344
|
作者：
Tyryshkin, AM
Lyon, SA [1 ]
Astashkin, AV
Raitsimring, AM
机构：
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Univ Arizona, Dept Chem, Tucson, AZ 85721 USA
来源：
PHYSICAL REVIEW B | 2003年 / 68卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.68.193207
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified Si-28:P are presented that show exceptionally long transverse relaxation (decoherence) times, T-2, at low temperature. Below similar to10 K the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. T-2 for small pulse turning angles is 14 ms at 7 K and extrapolates to similar to60 ms for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.
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页数：4
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