ELECTRON SPIN-LATTICE RELAXATION IN PHOSPHORUS-DOPED SILICON

被引：12

|

作者：

HONIG, H

STUPP, E

机构：

来源：

PHYSICAL REVIEW LETTERS | 1958年 / 1卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.1.275

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：275 / 276

页数：2

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