ELECTRON SPIN-LATTICE RELAXATION IN PHOSPHORUS-DOPED SILICON

被引：12
|
作者：
HONIG, H
STUPP, E
机构：
来源：
PHYSICAL REVIEW LETTERS | 1958年 / 1卷 / 08期
关键词：
D O I：
10.1103/PhysRevLett.1.275
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：275 / 276
页数：2
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