Effect of Fe substituted on the monovalent La0.85Ag0.15Mn1-xFexO3 doped manganites: Their electromagnetic and microwave properties
被引:8
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作者:
Apandi, N. A.
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机构:
Univ Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, MalaysiaUniv Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, Malaysia
Apandi, N. A.
[1
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Ibrahim, N.
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Univ Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, MalaysiaUniv Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, Malaysia
Ibrahim, N.
[1
]
Awang, Z.
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机构:
Univ Teknol Mara, Microwave Res Inst, Shah Alam 40450, Selangor, MalaysiaUniv Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, Malaysia
Awang, Z.
[2
]
Azis, R. S.
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机构:
Univ Putra Malaysia, Fac Sci, Dept Phys, Serdang 43400, Selangor, Malaysia
Univ Putra Malaysia, Inst Adv Technol ITMA, Mat Synth & Characterizat Lab MSCL, Upm Serdang 43400, Selangor, MalaysiaUniv Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, Malaysia
Azis, R. S.
[3
,4
]
Syazwan, M. M.
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Univ Putra Malaysia, Fac Sci, Dept Phys, Serdang 43400, Selangor, MalaysiaUniv Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, Malaysia
Syazwan, M. M.
[3
]
Yahya, A. K.
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Univ Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, MalaysiaUniv Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, Malaysia
Yahya, A. K.
[1
]
机构:
[1] Univ Teknol Mara, Sch Phys & Mat Studies, Shah Alam 40450, Selangor, Malaysia
[2] Univ Teknol Mara, Microwave Res Inst, Shah Alam 40450, Selangor, Malaysia
[3] Univ Putra Malaysia, Fac Sci, Dept Phys, Serdang 43400, Selangor, Malaysia
[4] Univ Putra Malaysia, Inst Adv Technol ITMA, Mat Synth & Characterizat Lab MSCL, Upm Serdang 43400, Selangor, Malaysia
Manganites;
Fe substitution;
Reflection loss;
Bandwidth;
Microwave Absorption;
ABSORPTION PROPERTIES;
MAGNETIC-PROPERTIES;
AG SUBSTITUTION;
TRANSPORT;
MAGNETORESISTANCE;
NANOCOMPOSITES;
FREQUENCY;
BEHAVIOR;
D O I:
10.1016/j.mseb.2021.115562
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
New microwave absorber material, La0.85Ag0.15Mn1-xFexO3 (x = 0, 0.05, 0.10, 0.15 and 0.20) monovalent-based manganites with epoxy resin as a binder were prepared to investigate the effect of Iron (Fe) substitution on microwave absorption properties. The La0.85Ag0.15Mn1-xFexO3 (x = 0, 0.05, 0.10, 0.15 and 0.20) manganites were prepared using solid state method. The phase identification investigated by using X-ray diffraction (XRD) pattern, showed that all samples were single phase rhombohedral crystal structure. Fe substitution caused increase in room temperature resistivity and decrease in ferromagnetic-paramagnetic transition temperature, Tc, indicating changes in carrier concentration and weakening of double exchange mechanism. Microwave reflection loss, RL measurements in the frequency range of 8 GHz to 18 GHz showed the highest reflection loss for x = 0 sample where value of reflection loss of - 57.2 dB at 16.41 GHz with a bandwidth of 2.67 GHz corresponding to reflection loss below - 10 dB was observed. However, Fe substitution produced lower reflection loss values with lowering of matching frequency with an upturn at x = 0.20. Permeability measurements showed real part of magnetic permeability increased but magnetic loss tangent decreased above 13 GHz with increasing Fe. Further analysis showed contribution of eddy current loss for most samples at high frequency region. On the other hand, permittivity measurements showed both real part of permittivity and dielectric loss tangent increased with Fe content at high frequencies indicates Fe substitution enhancing the dielectric loss component thus may dominantly contributes to the microwave absorption in the Fe substituted samples.
机构:
Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, ChinaHebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, China
Qian, J.J.
Li, Z.Z.
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机构:
Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, ChinaHebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, China
Li, Z.Z.
Qi, W.H.
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机构:
Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, ChinaHebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, China
Qi, W.H.
Ma, L.
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机构:
Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, ChinaHebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, China
Ma, L.
Tang, G.D.
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机构:
Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, China
State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing,100190, ChinaHebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, China
Tang, G.D.
Du, Y.N.
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机构:
Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, ChinaHebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, China
Du, Y.N.
Chen, M.Y.
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机构:
Hebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, ChinaHebei Advanced Thin Film Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang City,050024, China