A CONCURRENT TRIPLE-BAND CMOS LOW NOISE AMPLIFIER FOR FOURTH GENERATION APPLICATIONS

被引：1

作者：

Jang, Yohan ^{[1
]}

Choi, Jaehoon ^{[1
]}

机构：

[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2011年 / 53卷 / 02期

关键词：

low noise amplifier; concurrent triple resonance; CMOS; LTE; WiMAX;

D O I：

10.1002/mop.25743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a concurrent triple-band low noise amplifier (LNA) is designed for long term evolution (LTE), Mobile-WiMAX (M-WiMAX), and WiMAX services. The main topology of the proposed LNA is a cascode architecture with source degeneration using shunt resistive feedback topology for the triple-resonance characteristic. The LNA is designed using a Taiwan Semiconductor Company (TSMC) 0.18 mu m radio frequency CMOS process. To obtain the necessary gains over the operating frequency bands, a series LC branch is added in parallel with an inductor at the drain load of a single band LNA. The peak gains at LTE, M-WiMAX, and WiMAX bands are 17.6, 14.7, and 14.5 dB, respectively, whereas dissipating 8 mA from a 1.4 V supply voltage. The average noise figure over the three operating frequency bands is 4.5 dB. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:415-418, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25743

引用

页码：415 / 418

页数：4

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