A fully integrated concurrent dual-band CMOS low-noise amplifier

被引：5

作者：

Zhang, YP ^{[1
]}

Chew, KW ^{[1
]}

Wong, PF ^{[1
]}

Do, MA ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch EEE, Integrated Syst Res Lab, Singapore 2263, Singapore

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2003年 / 39卷 / 01期

关键词：

CMOS; low-noise amplifier; RF circuits;

D O I：

10.1002/mop.11124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a fully integrated concurrent dual-bond CMOS low-noise amplifier (LNA). The LNA is implemented in a standard 0.18-mum 6M1P CMOS process and is designed from the system viewpoint to provide higher gain at the higher band, for the first time, to compensate the higher-band signal's extra loss over the air transmission. The LNA drains 5.3 mA of current from a 1.8-V supply voltage and achieves voltage gains of 16 and 22.5 dB, input return losses of 28 and 27 dB, and noise figures of 3.0 and 3.1 dB at 2.4 and 5.2 GHz, respectively. (C) 2003 Wiley Periodicals, Inc.

引用

页码：52 / 53

页数：2

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