Electrical resistivity and structural investigation of vacuum evaporated thin films of InSb

被引：0
|
作者：
Singh, S [1 ]
Lal, K [1 ]
Kishore, R [1 ]
Sharma, SK [1 ]
机构：
[1] Natl Phys Lab, New Delhi 110012, India
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of InSb have been prepared at room temperature (RT), 100 degrees C and 200 degrees C by vacuum evaporation using indium antimonide compound. The films grown at RT and 100 degrees C have been annealed at 200 degrees C. I-V characteristics of these films have been measured and from resistivity v/s temperature curve the band gap of these films has been determined The structure of these films has been investigated using transmission electron microscope.
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页码：360 / 364
页数：5
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