Contrast mechanism of ferroelectric domains in scanning capacitance microscopy

被引:4
|
作者
Leu, CC [1 ]
Chien, CH
Chen, CY
Chang, MN
Hsu, FY
Hu, CT
机构
[1] Natl Nano Device Labs, Hsinchu 30043, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan
关键词
D O I
10.1149/1.1789811
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The contrast mechanism of the scanning capacitance microscopy (SCM) to exhibit the ferroelectric domain structures is demonstrated. An image, developed by the mapping of differential capacitance in a virgin SrBi2Ta2O9 (SBT) thin film, was observed and three sharp contrast states of white, black, and gray were revealed. A hysteresis loop depicting the opposing polarities at zero bias was obtained by local measurement and, subsequently, the hysteretic capacitance-voltage curves, as the characteristic of domain switching, were acquired by integrating the calibrated differentiation capacitance. It is concluded that the white and black contrast in SCM images are due to the antiparallel 180 degrees domains whereas the gray contrast is due to the trivial differential capacitance variation. These results strongly suggest that the local capacitance variation can be correlated well with the polarities of polarizations in nanoscale domains. (C) 2004 The Electrochemical Society.
引用
收藏
页码:A327 / A330
页数:4
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