Crossbar Memory Architecture Performing Memristor Overwrite Logic

被引:0
|
作者
Ali, Khaled Alhaj [1 ,4 ]
Rizk, Mostafa [1 ,3 ,4 ]
Baghdadi, Amer [1 ]
Diguet, Jean-Philippe [2 ]
Jomaah, Jalal [4 ]
机构
[1] CNRS, UMR 6285, Inst Mines Telecom, IMT Atlantique,Lab STICC, Brest, France
[2] Univ Bretagne Sud, CNRS, UMR 6285, Lab STICC, Lorient, France
[3] Int Univ Beirut, Beirut, Lebanon
[4] Lebanese Univ, Fac Sci, Phys Dept, Beirut, Lebanon
关键词
Memristor; Memristor Overwrite Logic (MOL); Crossbar array; Logic design; DESIGN;
D O I
10.1109/icecs46596.2019.8964910
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The non-volatile resistive state of memristor and the ease of controlling this state have triggered its usage in the design of non-volatile memories as well as logic design applications. The memristor based material implication (IMPLY) and memristor aided logic (MAGIC) have been recently presented as new methods to achieve logic computations inside memristive memory architectures. However, these methods are still surrounded by several design constraints. In this context, we present new design for memristive memories with an added computational capabilities. These capabilities are exclusively based on our proposed logic design style, namely Memristor Overwrite Logic (MOL) which is fully digital and tolerant against memristor technology variations.
引用
收藏
页码:723 / 726
页数:4
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