InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices

被引：22
|
作者：
Toledo, Nikholas G. [1 ]
Mishra, Umesh K. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 11期
关键词：
ENERGY-GAP; SINGLE;
D O I：
10.1063/1.4723831
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The use of InGaN photovoltaic devices as a top cell in a tandem solar cell has the potential to improve the power conversion efficiency of multi-junction devices. The effects of the InGaN top cell's external quantum efficiency, voltage offset, and fill factor on the integrated III-nitride/non-III-nitride solar cell's power conversion efficiency are presented. The results are summarized into the III-nitride device parameter requirements for top cell applications. The minimum acceptable area ratio between the III-nitride and non-III-nitride subcells in a 3- or 4-terminal device is also determined. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723831]
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页数：8
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