Charge transport and electroluminescence in PECVD grown silicon-nanocrystals-based LEDs

被引：0
|
作者：
Anopchenko, A. [1 ]
Prezioso, S. [1 ]
Gaburro, Z. [1 ]
Feffaioli, L. [1 ]
Pucker, G. [2 ]
Bellutti, P. [2 ]
Pavesi, L. [1 ]
机构：
[1] Univ Trent, Dept Phys, Via Sommarive 14, I-38050 Trento, Italy
[2] FBK IRST, Microbiol Lab, I-38050 Trento, Italy
来源：
2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2007年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical carrier injection into PECVD grown silicon-nanocrystals-based LEDs was examined by I-V, C-V, and impedance measurements. Electroluminescence was measured as a function of gate AC frequency. The correlations between conduction mechanism and electroluminescence are discussed.
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页码：70 / +
页数：2
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