Thin multiplication region InAlAs homojunction avalanche photodiodes

被引：75

作者：

Lenox, C ^{[1
]}

Yuan, P ^{[1
]}

Nie, H ^{[1
]}

Baklenov, O ^{[1
]}

Hansing, C ^{[1
]}

Campbell, JC ^{[1
]}

Holmes, AL ^{[1
]}

Streetman, BG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.122000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low excess noise in avalanche photodetectors (APDs) is desired for improved sensitivity and high-frequency performance. Gain and noise characteristics an measured for InAlAs p-i-n homojunction APDs that were grown with varying i-region widths on InP by molecular beam epitaxy, The effective ionization ratio k (beta/alpha.) determined by noise measurements shows a dependence oil multiplication region width, reducing from 0.31 to 0.18 for multiplication region thicknesses of 1600-200 nm. This trend follows previously shown results in AlGaAs-based APDs, which exhibit reduced excess noise due to nonlocal multiplication effects. These results show that this effect is a characteristic of thin avalanche regions and is not a material-specific phenomenon. (C) 1998 American Institute of Physics. [S0003-6951 (98)00332-5].

引用

页码：783 / 784

页数：2

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