Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1-xN/GaN heterostructures

被引：3

作者：

Liu, Guipeng ^{[1
,2
]}

Zhang, Jinfeng ^{[3
]}

Lu, Kunyi ^{[4
]}

Chen, Wenjie ^{[1
,2
]}

Tian, Yonghui ^{[1
,2
]}

Yang, Jianhong ^{[1
,2
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Gansu, Peoples R China

[2] Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Gansu, Peoples R China

[3] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Peoples R China

[4] Wuhan Univ, Elect Informat Sch, Wuhan 430072, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 83卷

基金：

中国国家自然科学基金;

关键词：

InAlN/GaN heterostructures; Electron mobility; Mole fraction fluctuation; INALN/(IN)GAN;

D O I：

10.1016/j.physe.2016.05.016

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In an InxAl1-xN/GaN heterostructure, we have studied the mobility limited by the In mole fraction fluctuation scattering. The In mole fraction fluctuation characterizes the quality of the InxAl1-xN material with two parameters, one is the mole fraction fluctuation delta x and the other is its lateral s Lambda. Similar to a roughness scattering, for a fixed mole fraction x, the mobility limited by the In mole fraction fluctuation initially decreases with Lambda increasing, reaches a minimum at a certain value of Lambda and then increases. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：207 / 210

页数：4

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