Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1-xN/GaN heterostructures

被引：3
|
作者：
Liu, Guipeng [1 ,2 ]
Zhang, Jinfeng [3 ]
Lu, Kunyi [4 ]
Chen, Wenjie [1 ,2 ]
Tian, Yonghui [1 ,2 ]
Yang, Jianhong [1 ,2 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Gansu, Peoples R China
[2] Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Gansu, Peoples R China
[3] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Peoples R China
[4] Wuhan Univ, Elect Informat Sch, Wuhan 430072, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 83卷
基金：
中国国家自然科学基金;
关键词：
InAlN/GaN heterostructures; Electron mobility; Mole fraction fluctuation; INALN/(IN)GAN;
D O I：
10.1016/j.physe.2016.05.016
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In an InxAl1-xN/GaN heterostructure, we have studied the mobility limited by the In mole fraction fluctuation scattering. The In mole fraction fluctuation characterizes the quality of the InxAl1-xN material with two parameters, one is the mole fraction fluctuation delta x and the other is its lateral s Lambda. Similar to a roughness scattering, for a fixed mole fraction x, the mobility limited by the In mole fraction fluctuation initially decreases with Lambda increasing, reaches a minimum at a certain value of Lambda and then increases. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：207 / 210
页数：4
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