High-Efficiency Three-Phase Inverter with SiC MOSFET Power Modules for Motor-Drive Applications

被引：0

作者：

Colmenares, Juan ^{[1
]}

Peftitsis, Dimosthenis ^{[1
]}

Tolstoy, Georg ^{[1
]}

Sadik, Diane ^{[1
]}

Nee, Hans-Peter ^{[1
]}

Rabkowski, Jacek ^{[2
]}

机构：

[1] KTH Royal Inst Technol, Dept Elect Energy Convers, Stockholm, Sweden

[2] Warsaw Univ Technol, Inst Control & Ind Elect, Warsaw, Poland

来源：

2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2014年

关键词：

GATE DRIVER; CONVERTER; JFET; TRANSISTORS; DEVICES;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents the design process of a 312 kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase-leg. The design processes of the gate-drive circuits with short-circuit protection and the power circuit layout are also presented. Electrical measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Experimental results showing the electrical performance during steady-state operation of the power converter are also shown. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been estimated for the inverter.

引用

页码：468 / 474

页数：7

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