Interface characterization of atomic layer deposited Al2O3 on m-plane GaN

被引：17

作者：

Jia, Ye ^{[1
]}

Wallace, Joshua S. ^{[2
]}

Echeverria, Elena ^{[3
]}

Gardella, Joseph A., Jr. ^{[2
]}

Singisetti, Uttam ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] SUNY Buffalo, Dept Chem, Buffalo, NY 14260 USA

[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 08期

关键词：

Al2O3; band offset; GaN; interfaces; non-polar surfaces; X-ray photoelectron spectroscopy; LIGHT-EMITTING-DIODES; RAY PHOTOELECTRON-SPECTROSCOPY; FIELD-EFFECT TRANSISTORS; INGAN/GAN LASER-DIODES; BAND OFFSETS; OHMIC CONTACT; A-PLANE; SURFACES; ENERGY; POLAR;

D O I：

10.1002/pssb.201600681

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interfaces between dielectrics and semiconductors play a dominant role in the performance of both electronic and optoelectronic devices. In this article, we report the band offset characterization of atomic layer deposited Al2O3 on non-polar m-plane (1 (1) over bar 00) GaN grown by hybrid vapor phase epitaxy using X-ray photoelectron spectroscopy (XPS). The surface band bending of GaN was investigated by employing the angle resolved XPS (ARXPS). The Fermi level pinning is found to be at similar to 2.4 eV above valence band maximum near the surface. The valence band offset and conduction band offset at the Al2O3 and m-plane GaN interface were determined to be 1.0 and 2.2 eV respectively. Electrical measurement was done by using metal-oxide-semiconductor capacitor. Capacitance-voltage hysteresis loop indicated low density of oxide traps. The frequency dependent C-V curves also showed a small dispersion. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：7

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