A V-Parameter Approach to the Design of One-Port Negative Resistance Oscillators

被引：0
|
作者：
Zhang, Ji-Tao [1 ]
机构：
[1] Haerbin Univ Sci & Technol, Higher Educ Key Lab Measuring & Control Technol &, Haerbin, Peoples R China
来源：
PROCEEDINGS OF 2013 2ND INTERNATIONAL CONFERENCE ON MEASUREMENT, INFORMATION AND CONTROL (ICMIC 2013), VOLS 1 & 2 | 2013年
关键词：
oscillator; MESFET; Y parameters; phase noise; PHASE-NOISE; VCO; BAND;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The theory and design of a GaAs MESFET oscillator are presented. The oscillator is designed by the technique which utilizes readily available device and circuit Y parameters to predict oscillation conditions, stability, and noise performance. The simulation result shows that the oscillation frequency is 6.58 GHz with 11.392 dBm output power. The phase noise is -98.7 dBc at 100 kHz offset.
引用
收藏
页码：214 / 217
页数：4
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