A 0.6V temperature-stable CMOS voltage reference circuit with sub-threshold voltage compensation technique

被引:7
|
作者
Cai, Zhikuang [1 ,2 ]
Chen, Chao [2 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China
[2] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源
IEICE ELECTRONICS EXPRESS | 2018年 / 15卷 / 18期
基金
中国国家自然科学基金;
关键词
reference circuit; near-threshold; low-supply voltage;
D O I
10.1587/elex.15.20180760
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a CMOS reference circuit which can work properly under the near-threshold voltage of 0.6 V. It is based on the temperature characteristic of NMOS&PMOS transistors in the sub-threshold region. The temperature curve of the NMOS quasi-PTAT current and the PMOS quasi-PTAT current can be adjusted to have the same slope factor. Thus a temperature-stable reference voltage can be achieved by subtracting the quasi-PTAT voltage generated by the NMOS and PMOS circuits. It can be used under the supply voltage of 0.6 V, under which a traditional bipolar-based band gap reference cannot work properly. The circuit is designed and implemented in SMIC 65 nm CMOS process. It provides a nominal reference voltage of 154 mV, a average temperature coefficient of 87 ppm/degrees C in [-10 degrees C similar to 80 degrees C] under a 0.6 V supply voltage. The total power consumption is 60 mu W and the chip area is 345 um * 182 um.
引用
收藏
页数:8
相关论文
共 50 条
  • [22] Temperature-stable voltage reference based on different threshold voltages of NMOS transistors
    Xia, X.
    Xie, L.
    Sun, W.
    Shi, L.
    IET CIRCUITS DEVICES & SYSTEMS, 2009, 3 (05) : 233 - 238
  • [23] Low-voltage bandgap reference with temperature compensation based on a threshold voltage technique
    Bendali, A
    Savaria, Y
    2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL III, PROCEEDINGS, 2002, : 201 - 204
  • [24] Ultra-low line sensitivity and high PSRR sub-threshold CMOS voltage reference
    Rashtian, Mohammad
    JOURNAL OF ENGINEERING-JOE, 2023, 2023 (04):
  • [25] A temperature and supply voltage independent CMOS voltage reference circuit
    Matsuda, T
    Minami, R
    Kanamori, A
    Iwata, H
    Ohzone, T
    Yamamoto, S
    Ihara, T
    Nakajima, S
    IEICE TRANSACTIONS ON ELECTRONICS, 2005, E88C (05) : 1087 - 1093
  • [26] A 0.6-V voltage reference circuit based on Σ-VTH architecture in CMOS/SIMOX
    Ugajin, M
    Tsukahara, T
    2001 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2001, : 141 - 142
  • [27] A 0.6-V supply, voltage-reference circuit based on threshold-voltage-summation architecture in fully-depleted CMOS/SOI
    Ugajin, M
    Suzuki, K
    Tsukahara, T
    IEICE TRANSACTIONS ON ELECTRONICS, 2002, E85C (08): : 1588 - 1595
  • [28] A 0.6-V supply, voltage-reference circuit based on threshold-voltage-summation architecture in fully-depleted CMOS/SOI
    Ugajin, Mamoru
    Suzuki, Kenji
    Tsukahara, Tsuneo
    IEICE Transactions on Electronics, 2002, E85-C (08) : 1588 - 1595
  • [29] A 0.45 V, 15.6 nW MOSFET-only Sub-threshold Voltage Reference with no Amplifiers
    Wang, Yutao
    Zhu, Zhangming
    Yao, Jiaojiao
    Yang, Yintang
    2015 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2015, : 153 - 156
  • [30] A Two-Stage Sub-Threshold Voltage Reference Generator Using Body Bias Curvature Compensation for Improved Temperature Coefficient
    Azimi, Mohammad
    Habibi, Mehdi
    Crovetti, Paolo
    ELECTRONICS, 2024, 13 (07)