Interpretation of dominant impurities in Cu films by secondary ion mass spectrometry and glow discharge mass spectrometry

被引：3

作者：

Lim, JW ^{[1
]}

Bae, JW ^{[1
]}

Mimura, K ^{[1
]}

Isshiki, M ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1A期

关键词：

copper; thin film; ion beam; impurity; SIMS; GDMS;

D O I：

10.1143/JJAP.44.373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu films were deposited on Si (100) substrates at substrate bias voltages of 0 V and -50 V by non-mass separated ion beam deposition. SIMS and GDMS were used. to determine the impurity concentrations of a Cu target and Cu films. According to the quantitative GDMS results, many unknown peaks observed in the SIMS spectra of the Cu films were assigned to cluster states such as CxHx, OxHx, and CxOxHx. Moreover, it was found that the dominant impurities in the films were H, C N, and 0 elements.

引用

页码：373 / 374

页数：2

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