Theory of Plasmonic Hot-Carrier Generation and Relaxation

被引:19
|
作者
Zhang, Yu [1 ]
机构
[1] Los Alamos Natl Lab, Theoret Div, Los Alamos, NM 87545 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY A | 2021年 / 125卷 / 41期
关键词
METAL NANOCRYSTALS; FUNDAMENTAL LIMITATIONS; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; ENERGY; QUANTUM; DYNAMICS; SOLAR; CONVERSION; STATE;
D O I
10.1021/acs.jpca.1c05837
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hot-carrier (HC) generation from (localized) surface plasmon decay has recently attracted much attention due to its promising applications in physical, chemical, materials, and energy science. However, the detailed mechanisms of plasmonic HC generation, relaxation, and trapping are less studied. In this work, we developed and applied a quantum-mechanical model and coupled master equation method to study the generation of HCs from plasmon decay and their following relaxation processes with different mechanisms treated on equal footing. First, a quantum-mechanical model for HC generation is developed. Its connection to existing semiclassical models and time-dependent density functional theory (TDDFT) is discussed. Second, the relaxation and lifetimes of HCs are investigated in the presence of electron-electron and electron-phonon interactions. A GW-like approximation is introduced to account for the electron-electron scattering. The numerical simulations on the Jellium nanoparticles with a size up to 1.6 nm demonstrate the electron-electron scattering and electron-phonon scattering dominate different time scale in the relaxation dynamics. We also generalize the model to study the extraction of HCs to attached molecules. The quantum yield of extracting HCs for other applications is found to be size-dependent. In general, the smaller size of NP improves the quantum yield, which is in agreement with recent experimental measurements. Even though we demonstrate this newly developed theoretical formalism with Jellium model, the theory applies to any other atomistic models.
引用
收藏
页码:9201 / 9208
页数:8
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