Residual layer-free Reverse Nanoimprint Lithography on silicon and metal-coated substrates

被引：16

作者：

Fernandez, Ariadna ^{[1
]}

Medina, Juan ^{[1
]}

Benkel, Christian ^{[2
]}

Guttmann, Markus ^{[2
]}

Bilenberg, Brian ^{[3
]}

Thamdrup, Lasse H. ^{[3
]}

Nielsen, Theodor ^{[3
]}

Sotomayor Torres, Clivia M. ^{[1
,4
]}

Kehagias, Nikolaos ^{[1
]}

机构：

[1] Catalan Inst Nanosci & Nanotechnol, Barcelona 08193, Spain

[2] KIT, Inst Microstruct Technol, D-76344 Eggenstein Leopoldshafen, Germany

[3] NIL Technol ApS, DK-2800 Lyngby, Denmark

[4] ICREA, Barcelona 08010, Spain

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 141卷

关键词：

Nanoimprint Lithography; Injection molding; Functional surfaces; WENZEL WETTING TRANSITION; IMPRINT LITHOGRAPHY; POLYMER; SURFACES; ENERGY;

D O I：

10.1016/j.mee.2014.11.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we demonstrate-that Reverse Nanoimprint Lithography is a feasible and flexible lithography technique applicable to the transfer of micro and nano polymer structures with no residual layer over areas of cm(2) areas on silicon, metal and non-planar substrates. We used a flexible polydimethylsiloxane stamp with hydrophobic features. We present residual layer-free patterns imprinted using a commercial poly(methylmethacrylate) thermoplastic polymer over silicon, nickel and pre-patterned substrates. Our versatile patterning technology is adaptable to free form nano structuring and has coupling to adhesion technologies. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：56 / 61

页数：6

共 50 条

[1] Mold Design Rules for Residual Layer-Free Patterning in Thermal Imprint Lithography
Yoon, Hyunsik
Lee, Sung Hoon
Sung, Seung Hyun
Suh, Kahp Y.
Char, Kookheon
LANGMUIR, 2011, 27 (12) : 7944 - 7948
[2] Homogeneity of Residual Layer thickness in UV Nanoimprint Lithography
Hiroshima, Hiroshi
Atobe, Hidemasa
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (06) : 06FH181 - 06FH184
[3] Homogeneity of residual layer thickness in UV nanoimprint lithography
National Institute of Advanced Industrial Science and Technology , AIST East 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
不详
Jpn. J. Appl. Phys., 6 PART 2 (06FH181-06FH184):
[4] Challenges of residual layer minimisation in thermal nanoimprint lithography
Bogdanski, Nicolas
Wissen, Matthias
Moellenbeck, Saskia
Scheer, Hella-Christin
EMLC 2007: 23RD EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, 2007, 6533
[5] Toward residual-layer-free nanoimprint lithography in large-area fabrication
Yoon, Hyunsik
Lee, Hyemin
Lee, Won Bo
KOREA-AUSTRALIA RHEOLOGY JOURNAL, 2014, 26 (01) : 39 - 48
[6] Toward residual-layer-free nanoimprint lithography in large-area fabrication
Hyunsik Yoon
Hyemin Lee
Won Bo Lee
Korea-Australia Rheology Journal, 2014, 26 : 39 - 48
[7] Controllable preparation of patterns of aligned carbon nanotubes on metals and metal-coated silicon substrates
Wang, BA
Liu, XY
Liu, HM
Wu, DX
Wang, HP
Jiang, JM
Wang, XB
Hu, PA
Liu, YQ
Zhu, DB
JOURNAL OF MATERIALS CHEMISTRY, 2003, 13 (05) : 1124 - 1126
[8] Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon
Bandarenka, Hanna V.
Girel, Kseniya V.
Zavatski, Sergey A.
Panarin, Andrei
Terekhov, Sergei N.
MATERIALS, 2018, 11 (05)
[9] Ferroelectric polymer nanopillar arrays on flexible substrates by reverse nanoimprint lithography
Song, Jingfeng
Lu, Haidong
Foreman, Keith
Li, Shumin
Tan, Li
Adenwalla, Shireen
Gruverman, Alexei
Ducharme, Stephen
JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (25) : 5914 - 5921
[10] Near-zero-residual layer nanoimprint based on hybrid nanoimprint soft lithography
Cui, Yushuang
Lu, Jingjun
Fu, XinXin
Bian, Jie
Yuan, Changsheng
Ge, Haixiong
Chen, Yanfeng
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 121 (02): : 371 - 375

← 1 2 3 4 5 →