Oxidation of aluminum in ozonated water

被引：0
|
作者：
Ritala, Heini [1 ]
Solehmainen, Kimmo [1 ]
Gronberg, Leif [1 ]
机构：
[1] VTT Informat Technol, Espoo 02044, Finland
来源：
PHYSICA SCRIPTA | 2004年 / T114卷
关键词：
D O I：
10.1088/0031-8949/2004/T114/059
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15 degrees C. At 25 and 35 degrees C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.
引用
收藏
页码：233 / 235
页数：3
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