Electro-thermal Simulations of Power Semiconductor Devices during High Stress Events

被引：0
|
作者：
Breglio, Giovanni [1 ]
Irace, Andrea [1 ]
Maresca, Luca [1 ]
Riccio, Michele [1 ]
机构：
[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy
来源：
2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRICAL SYSTEMS FOR AIRCRAFT, RAILWAY, SHIP PROPULSION AND ROAD VEHICLES & INTERNATIONAL TRANSPORTATION ELECTRIFICATION CONFERENCE (ESARS-ITEC) | 2018年
关键词：
component; formatting; style; styling; insert; SHORT-CIRCUIT; RUGGEDNESS; MOSFETS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present an effective simulation strategy to analyze the behavior of power semiconductor devices during high electro-thermal stress events. This technique can enable device designers and circuit engineers to foresee the device behavior during stressful events in order to assess eventual reliability issues or lifespan reduction.
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页数：4
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