X-ray double crystal diffractian study of InGaAs/GaAs quantum wells

被引：0
|
作者：
Yan, Y [1 ]
Xue, CY [1 ]
Zhang, BZ [1 ]
Zhang, WD [1 ]
机构：
[1] N Univ China, Minist Educ, Kay Lab Instrumentat Sci & Dynam Measurement, Shanxi 030051, Peoples R China
来源：
ISTM/2005: 6th International Symposium on Test and Measurement, Vols 1-9, Conference Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Two compound semiconductor (III-V) film structures are studied by high resolution X-ray double crystal diffraction. InGaAs/GaAs quantum wells grown on GaAs substrate is analyzed. X-ray double crystal diffiraction has a particular advantage of studying material crystal important information such as integrality, equality, deep of layer, composition, stress change, disfigurement and interface. Using it is not only providing exact parameters for growing material technics and directing growing technics, but also providing reliable basic for studying apparatus. This paper introduces a studying way for the optics character and structure of a model sample by the X-ray double crystal diffraction.
引用
收藏
页码：2271 / 2273
页数：3
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