Intraband relaxation process in highly stacked quantum dots

被引：3

作者：

Kojima, Osamu ^{[1
]}

Mamizuka, Masataka ^{[1
]}

Kita, Takashi ^{[1
]}

Wada, Osamu ^{[1
]}

Akahane, Kouichi ^{[2
]}

机构：

[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, 1-1 Rokkodai, Kobe, Hyogo 6578501, Japan

[2] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1 | 2011年 / 8卷 / 01期

关键词：

intraband relaxation; photoexcited carriers; quantum dots; quantum chains; photoluminescence; ROOM-TEMPERATURE;

D O I：

10.1002/pssc.201000661

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the intraband relaxation properties of photoexcited carriers in ordinary stacked quantum dots (QDs) and QD chains in which QDs are interconnected along the growth direction via electron envelope functions. The detection-energy dependence of the photoluminescence (PL) decay time indicates the in-plane interaction between QDs even at 50 K by carrier transfer. From the excitation-energy dependence of the PL intensity, we found the change in the intraband relaxation process due to the transfer process in the QD chain sample with longer exciton lifetime than in the stacked QD sample. Our results indicate that the change in the intraband relaxation process depends on the exciton lifetime. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：46 / 49

页数：4

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