Intraband relaxation in CdSe quantum dots

被引：341

作者：

Guyot-Sionnest, P ^{[1
]}

Shim, M ^{[1
]}

Matranga, C ^{[1
]}

Hines, M ^{[1
]}

机构：

[1] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.60.R2181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relaxation of the 1P to 1S electronic states of CdSe semiconductor nanocrystals is followed by infrared pump-probe spectroscopy. Fast (1 ps) and slow (>200 ps) components are-observed. Using different capping molecules to control the hole states, we show how the intraband relaxation slows down as the hole is in a shallow trap, a deep trap, or a charge-separated complex, providing strong support for an electron-hole Auger coupling. The slow component corresponds to an energy relaxation rate orders of magnitude slower than in bulk systems. It may be the first indication of the phonon bottleneck effect long expected in strongly confined quantum dots. [S0163-1829(99)51128-4].

引用

页码：R2181 / R2184

页数：4

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