Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films

被引：7

作者：

Adam, Thomas ^{[1
]}

Loubet, Nicolas ^{[2
]}

Reznicek, Alexander ^{[1
]}

Paruchuri, Vamsi ^{[1
]}

Sampson, Ron ^{[2
]}

Sadana, Devendra ^{[3
]}

机构：

[1] IBM Res Albany Nanotech, Albany, NY 12203 USA

[2] STMicroelect Albany Nanotech, Albany, NY 12203 USA

[3] IBM Res Corp, Yorktown Hts, NY 10598 USA

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 08期

关键词：

Silicon-carbon; Phosphorous; Chemical vapor deposition; RPCVD; Carbon; Laser annealing; SI(111); GROWTH;

D O I：

10.1016/j.tsf.2011.10.097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of thermal heat treatment on carbon in in-situ phosphorous-doped silicon-carbon is studied as a function of annealing temperature and type. Films of 0 to 2% carbon were deposited using cyclic chemical vapor deposition at reduced pressures. Secondary ion-mass spectroscopy and high-resolution X-ray diffraction were employed to extract the total and substitutional carbon concentration in samples with phosphorous levels of mid-10(20) cm(-3). It was found that millisecond laser annealing drastically improves substitutionality while high thermal budget treatments (furnace, rapid-thermal, or spike annealing) resulted in an almost complete loss of substitutional carbon, independent of preceding or subsequent laser heat treatments. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3155 / 3157

页数：3

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